= Amphoteric dopant
An amphoteric dopant can act as a <donor impurity> or an <acceptor impurity> according to its incorporated lattice site or defect configuration. <Silicon> in <gallium arsenide> is the standard example: substitution on the <gallium> sublattice gives a shallow donor, while substitution on the <arsenic> sublattice gives a shallow acceptor. Its electrical effect therefore depends on growth conditions as well as total silicon concentration.<Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others>[Abstract: neutral and ionized donor species occupy Ga sites; neutral and ionized acceptor species occupy As sites]{ref}
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