= Bias spectroscopy of one-dimensional subbands
{title2=$E_{n+1}-E_n=e|V|$}
In a rigid spectrum, source and drain threshold lines in a bias-versus-gate map satisfy $E_n(V_g)=\mu_S$ or $\mu_D$. Where adjacent thresholds align with opposite edges of the bias window, their spacing equals the window width $e|V|$. For symmetric bias and <spin degeneracy>, neighboring channel counts at those edges give a differential <electrical conductance> halfway between integer $2e^2/h$ plateaus. The dc ratio $I/V$ is a different observable; barrier motion and heating can modify the interpretation.
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