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Read the displayed axes as horizontal $[001]$ and vertical $[010]$; the viewing direction is therefore consistent with $[100]$. crystal facets edge-on in this projection have normals in the $yz$ plane. The flat upper/lower boundaries are approximately horizontal, the end face vertical, and the bevels approximately $45^{\circ }$ to both.

A probable low-index assignment is upper face $(010)$, end face $(001)$ and lower-right bevel $(0\bar{1}1)$, with the upper-right bevel $(011)$ if it is also indexed. Thus the flat faces belong to $\{100\}$ and the diagonal faces to $\{110\}$.

For example,giving $90^{\circ }$ and $45^{\circ }$ between normals. The upper $(010)$ normal and lower bevel $(0\bar{1}1)$ normal instead make $135^{\circ }$; their acute unoriented plane angle is $45^{\circ }$. Adjacent polygon corners between a flat edge and bevel have internal angles near $135^{\circ }$.

The distinction between a normal angle, an acute plane angle and an internal polygon angle avoids a supplementary-angle error. This is a probable projected indexation, not a unique full three-dimensional crystal facet reconstruction. The associated work uses tomography precisely to recover information absent from one projection.^[ref] The original facet-normal diagram in the growth-and-LED figure shows the $45^{\circ }$ relation independently of the source micrograph.

Two suitable epitaxial techniques are metalorganic vapour-phase epitaxy and molecular beam epitaxy.

MOVPE supplies metalorganic group-III precursors and a reactive nitrogen source in a flowing gas. Surface reactions, mass transport and selective nucleation control growth; it is well suited to conformal radial growth and relatively high throughput. molecular beam epitaxy supplies molecular/atomic beams in high vacuum, with beam fluxes and shutters controlling delivery. It offers precise flux switching and in-situ surface monitoring, but flux, geometry and nitrogen activation can limit growth rate and conformality. Neither method automatically gives identical growth on all wire crystal facets.

For an overall target near $40\mathrm{nm}\mathrm{mi}{\mathrm{n}}^{-1}=2.4\mu \mathrm{m}{\mathrm{h}}^{-1}$, MOVPE is a natural choice. This is a practical selection, not a theorem that molecular beam epitaxy cannot attain that rate.

Prepare the substrate/buffer and patterned SiN growth mask; grow donor-doped gallium nitride cores with controlled axial morphology; change conditions to favor radial deposition and incorporate indium for the thin indium gallium nitride active shell; then overgrow acceptor-doped p-GaN without degrading the active layer. Finally expose/contact the core and shell appropriately. Monitor facet-dependent thickness and indium content, and characterize the interfaces. If the active-layer normal rate itself were $40\mathrm{nm}\mathrm{mi}{\mathrm{n}}^{-1}$, 5 nm would take 7.5 s; the stated overall rate does not establish that the alloy shell actually grows at that same rate.