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A researcher in spintronics whose review with Daniel Lacour relates electrical resistance to the magnetic configuration of layered devices. A magnetic tunnel junction consists of two magnetic conductors separated by a thin insulating barrier; quantum tunnelling through the barrier depends on the electronic states available for each electron spin. This produces tunnelling magnetoresistance, illustrating how the magnetic state of a device can be read through an electrical measurement.^[ref]

Alain Schuhl and Daniel Lacour's authored article in C. R. Physique6,pp.945–955. Section2.1 discusses Mott two-current model transport parameters and the spin asymmetry of defect scattering;§2.2 describes averaging scattering when carriers sample several layers. This supports the model qualifications without asserting a universal iron channel ordering.