Deep reactive-ion etching (source code)

= Deep reactive-ion etching

= DRIE
{c}
{synonym}

Directional plasma <etching> used for deep, high-aspect-ratio features. Alternating fluorine-based <silicon> <etching> and sidewall <passivation> is one implementation; transport, mask erosion, charging, scallops and aspect-ratio-dependent etch rate constrain the achievable structure.