Si photodiodes by Hamamatsu Photonics K.K. 2026-10-18
Technical note issued and hosted by Hamamatsu Photonics K.K.. No individual author is credited. Page 17 states that the information is current as of December 2025; this is an information-currency date, not an established first-publication date.
Corporate technical note issued by Hamamatsu Photonics K.K., document KIRD9005E. No personal author or chapter byline is credited.
Information current as of May 2024, as printed on p. 6; this is not established as the first publication date. Hamamatsu Photonics hosts the document.
Official technical note: www.hamamatsu.com/content/dam/hamamatsu-photonics/sites/documents/99_SALES_LIBRARY/ssd/thermopile_kird9005e.pdf
Cited passages: p. 2, §2 Structure: membrane absorber, reference junction locations and nonuniform temperatures; p. 2, Eq. (2-1): sum of thermocouple voltages; p. 3, §3-1 Sensitivity, Eq. (3-1): uniform illumination and localized spots; p. 3, §3-2 Noise, Eq. (3-2): resistance, absolute temperature and bandwidth; p. 6, institutional contact and information-current-as-of statement.