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For a representative unstrained zinc blende structure III-V semiconductor such as gallium arsenide, take the valence-band maximum at the Gamma point as zero. The near-centre ordering is an s-like ${\Gamma }_{6c}$ conduction band doublet above a p-like ${\Gamma }_{8v}$ valence quartet. Spin-orbit interaction puts the p-like ${\Gamma }_{7v}$ doublet below the quartet by ${\Delta }_{\mathrm{so}}$. These are the zone-centre bands of a zinc-blende III-V semiconductor.

The $j=3/2$ quartet produces the heavy-hole and light-hole bands. Along a chosen symmetry direction, their components have $|m_j|=3/2$ and $1/2$ respectively; their different curvatures define different positive hole effective masses. They are degenerate at zero wavevector in the unstrained cubic crystal, but separate away from it. The $j=1/2$ doublet is the split-off valence band. To leading isotropic order,Valence-band curvature is negative for electrons; the corresponding hole masses are positive. Real valence bands warp with direction, so these are illustrative effective-mass parabolas rather than an exact spherical band structure.

The k·p perturbation theory couples the s-like and p-like states through momentum matrix elements. It controls the conduction-band mass, nonparabolicity and mixing of hole characters. Strain or quantum confinement can split the heavy/light degeneracy even at zero in-plane wavevector. The lack of inversion symmetry in zinc blende also permits spin splitting away from the zone centre; time-reversal symmetry still protects the zone-centre doublets.

The s–p electric-dipole transitions near $\Gamma$ are optically important and produce structures at $E_g$ and $E_g+{\Delta }_{\mathrm{so}}$ with polarization-dependent weights. For direct band gap compounds the conduction minimum is also at $\Gamma$, allowing near-edge absorption and emission without a momentum-supplying phonon. Not every III-V compound is direct-gap, and wurtzite materials have an additional crystal-field splitting; the cubic scheme should not be imposed on every III-V semiconductor. ^[ref]