 Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others (source code)

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= Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others
{c}
{tag=Work by Hiroshi Amano}
{tag=Work by Nobuhiko Sawaki}
{tag=Work by Isamu Akasaki}
{tag=Work by Y. Toyoda}
{title2=1986; journal issue publication 3 February 1986}

Applied Physics Letters 48, 353–355. Journal article.

https://doi.org/10.1063/1.96549

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