= Mott transition
A Mott transition is a change between a conducting state and a <Mott insulator>, driven by the competition between <electron> motion and <electron repulsion>. A partially filled <energy band> need not conduct if repulsion makes moving an <electron> onto an already occupied site too costly.
The half-filled <Hubbard model> illustrates the mechanism: hopping lowers the <kinetic energy>, whereas on-site repulsion $U$ penalizes double occupation. Increasing $U$ relative to the <energy-band width> can suppress charge motion and open a gap for charge excitations. Changing pressure, composition or carrier concentration can alter that competition, although actual materials may also change their crystal structure or magnetic order. This interaction mechanism differs from a <band insulator> with filled bands and from disorder-driven <Anderson localization>.
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