Naruhito Iwasa (source code)

= Naruhito Iwasa
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= N. Iwasa
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Naruhito Iwasa coauthored experiments on <p-type semiconductor> behavior in <gallium nitride>. Contrasting <annealing> in nitrogen and ammonia linked changes in <electrical resistivity> to <hydrogen>; the authors proposed neutral complexes of <hydrogen> and <acceptor impurities> as a mechanism reducing mobile <electron holes>.<Hole Compensation Mechanism of P-Type GaN Films by Shuji Nakamura and others>[pp. 1258–1266, author list, abstract and experimental comparison of annealing atmospheres: hydrogen-related hole compensation; indexed primary PDF text.]{ref}