= Nobuhiko Sawaki
{c}
Nobuhiko Sawaki coauthored a method for growing <gallium nitride> on <sapphire> by <metalorganic vapour-phase epitaxy>, introducing an <aluminium nitride> layer before the main film. The films had flat, crack-free surfaces, with <X-ray diffraction> and <photoluminescence> used to assess their quality.<Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others>[Applied Physics Letters 48 (1986), pp. 353–355: author list and abstract, atmospheric-pressure growth with AlN layers and optical/diffraction characterization; primary article copy.]{ref}
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