One-electron defect plateau
= One-electron defect plateau
For a repulsive single orbital at <temperatures> small compared with U, <chemical potentials> strictly between the first and second addition energies select a singly occupied defect. Its mean occupation is nearly one while its charge-number <variance> is exponentially small away from the thermally broadened step regions. The remaining <spin degeneracy> does not itself produce charge-number fluctuations.