= Optical absorption due to excitation of electrons bound to Si and S in GaP by A. A. Onton
{c}
{tag=Work by A. A. Onton}
{title2=1969}
Author’s institutional publication record: https://research.ibm.com/publications/optical-absorption-due-to-excitation-of-electrons-bound-to-si-and-s-in-gap
Physical Review (15 October 1969). Infrared transmission at liquid-helium temperature resolves donor-electron transitions in sulfur- and silicon-doped <gallium phosphide>. The sulfur optical ionization energy is approximately $104.2\,\mathrm{meV}$.
Back to article page
