= Solution
\b[Conventional <semiconductor> <scanning capacitance microscopy> is not a reliable dopant-contrast image of this specimen as drawn.] Its usual $dC/dV$ signal relies on a tip–insulator–<semiconductor> <capacitance> whose depletion region changes under AC bias. An isolated conducting <graphene> sheet on thick insulating <glass> provides neither that conventional depletion geometry nor a controlled charge reservoir; simply earthing <glass> does not supply one. Capacitive or electrostatic contrast may be detectable with a suitably designed back <electrode>, a contacted flake and an appropriate capacitance-sensitive instrument, but that is an additional electrical device specification. Force-based <surface topography> remains possible independently of the specialized <capacitance> channel.
Back to article page
