= Solution
\b[The resist is positive tone], because the written regions are the regions removed during development. A suitable example is <poly(methyl methacrylate)>, conventionally <PMMA>, used in its ordinary positive-tone electron-beam exposure regime. Electron-induced <chain scission> reduces its <molar mass> and increases its solubility in the developer.
The fact that this writing step fabricates an <extreme ultraviolet> mask does not make the resist an EUV-exposed resist: the exposure process being classified here is the electron-beam mask-writing step.
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