= Solution
\b[Use anisotropic alkaline wet etching of a suitably oriented crystalline <silicon> wafer.] A KOH- or TMAH-based process etches crystallographic planes at different rates, leaving slow-etching $\{111\}$ facets as a pyramidal texture on a $\{100\}$ wafer. The facets redirect reflected light towards neighbouring surfaces, increasing the chance of absorption rather than specular escape.
Choose conditions that give a uniform texture without excessive removal or contamination, and clean the wafer before forming the junction. This mechanism depends on crystallinity: a multicrystalline or differently oriented wafer may need another texture process. The drawing alone does not establish the wafer orientation, so the standard pyramidal-texture method carries that explicit assumption.
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