= Solution
A <gallium arsenide>/<aluminium gallium arsenide> <heterojunction> has a conduction-band offset that can confine electrons on the GaAs side. Donors in the wider-gap AlGaAs supply electrons; band bending produces a narrow interfacial potential well. Motion normal to the interface is quantized into subbands, while motion within the plane remains approximately free with GaAs effective mass. Occupying the lowest confinement subband creates a <two-dimensional electron gas>.
\b[<Modulation doping> spatially separates the ionized donors from the mobile electrons.] An undoped spacer between the donor layer and the channel reduces Coulomb scattering from donor ions while still allowing charge transfer. This can produce higher mobility than doping the conducting channel itself. The spacer thickness balances lower scattering against weaker carrier supply and electrostatic control; interface roughness, alloy disorder, phonons and background impurities can still limit mobility. The channel is a finite-width quantum wavefunction, not a mathematically zero-thickness sheet.
Back to article page
