Solution (source code)

= Solution

The resulting <dislocation density> reflects competing production, growth and recovery rates. The <irradiation> spectrum and <displacement dose rate> set the supply of recoil cascades and surviving <point defects>. Cascade structure controls the fraction born as isolated defects or clusters; equal nominal <displacements per atom> can therefore give different defect populations.

<Temperature> sets <vacancy> and interstitial mobilities and the rates of thermal emission and recovery. A simple <radiation damage rate theory> model illustrates the competition using number densities $c_i,c_v$:
$$
\begin{aligned}
\dot c_i&=G-K_{\rm rec}c_ic_v-D_i k_i^2c_i,\\
\dot c_v&=G-K_{\rm rec}c_ic_v-D_v k_v^2c_v.
\end{aligned}
$$
Here $G$ is the surviving mobile-pair production rate per volume, $K_{\rm rec}$ is the recombination coefficient, $D_i,D_v$ are <diffusion> coefficients, and $k_i^2,k_v^2$ are <sink strengths>. The model omits explicit cluster-size populations and thermal-equilibrium emission; those must be added for a quantitative description of a particular exposure.

The initial <dislocation density>, grain size, free surfaces, precipitates and existing cavities all change sink strengths. <Dislocations> can have an <interstitial bias>, so their capture rates for the two defect types differ. Solutes and transmutation gases alter defect binding and mobility. Crystal structure, elastic anisotropy and applied <stress> affect which loop orientations survive and grow.

For a number density $N_\ell$ of circular loops of radius $R$, their contribution to line length per volume is
$$
\boxed{\rho_\ell=2\pi R N_\ell.}
$$
Thus loop nucleation and loop growth both increase <dislocation density>, while shrinkage, annihilation and absorption at other sinks can decrease it. A change in loop count alone does not determine the change in total line density.

Schematically, $\dot\rho_d$ is a production-and-growth contribution minus recovery and annihilation. An initial rise followed by approximate saturation is possible when these balance, but the saturation value and approach rate depend on the evolving <microstructure>. There is no universal <dislocation density> fixed by dose alone.