= Planar process
{wiki}
The <planar process> fabricates <semiconductor> devices from a common surface while retaining a protective oxide over the exposed ends of their <p-n junctions>. <Jean Hoerni>'s patent describes selective openings in <silicon dioxide> for <semiconductor doping> and contacts, with oxide left over the <p-n junctions>. Protection and access are designed together; the surface is not simply stripped after fabrication. This was a distinct enabling contribution to the <monolithic integrated circuit>.<Method of manufacturing semiconductor devices by Jean Hoerni>[Description, opening problem statement and Figs. 6–10, masking, retained oxide and contact openings]{ref}
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