= Quasi-Fermi level
A <quasi-Fermi level> is a local electron or hole population parameter in a semiconductor driven out of equilibrium, assuming each population is internally close enough to thermal equilibrium to use a <Fermi-Dirac distribution>. Separate electron and hole parameters replace one common equilibrium <chemical potential>. Their spatial profiles depend on transport, generation and recombination as well as electrostatics. For ideal ohmic contacts with the p voltage $V$ relative to n, the contact electron <electrochemical potentials> obey $\mu_p-\mu_n=-eV$.
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