= William Shockley
{c}
{tag=Physicist}
{title2=1910-1989}
= William Bradford Shockley
{c}
{synonym}
= William B. Shockley
{c}
{synonym}
<William Shockley> developed the theory of <semiconductor> <p-n junctions> and junction transistors. Forward bias injects minority carriers across a junction; <diffusion> and recombination then determine how those carriers move through the neighboring material. In a transistor, a thin base allows much of the injected population to reach the collecting junction, making one electrical signal control another. The theory connects junction structure and carrier transport with quantitative current-voltage behavior.<The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors by William Shockley>[Bell System Technical Journal 28, 435–489 (1949), junction injection and transistor transport]{ref}
Identity and biography: https://www.nobelprize.org/prizes/physics/1956/shockley/biographical/?o=3510
\Image[https://upload.wikimedia.org/wikipedia/commons/b/b8/Shockley.jpg]
{title=Portrait of <William Shockley>}
{source=https://commons.wikimedia.org/wiki/File:Shockley.jpg}
{width=220}
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