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 Tagged: Work by A. A. Onton

Optical absorption due to excitation of electrons bound to Si and S in GaP by A. A. Onton 2026-10-20
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Author’s institutional publication record: research.ibm.com/publications/optical-absorption-due-to-excitation-of-electrons-bound-to-si-and-s-in-gap
Physical Review (15 October 1969). Infrared transmission at liquid-helium temperature resolves donor-electron transitions in sulfur- and silicon-doped gallium phosphide. The sulfur optical ionization energy is approximately 104.2meV.
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Total articles: 1
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