= Epitaxial graphene growth on silicon carbide
{wiki=Epitaxial_graphene_growth_on_silicon_carbide}
Epitaxial graphene growth on silicon carbide (SiC) is a process used to create high-quality graphene layers on the surface of silicon carbide substrates. Graphene is a single layer of carbon atoms arranged in a two-dimensional honeycomb lattice and possesses exceptional electrical, mechanical, and thermal properties. The ability to produce graphene on a suitable substrate is crucial for its application in various fields, including electronics, optics, and materials science. \#\#\# Process 1.
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