= Silicon-vacancy center in diamond
{wiki=Silicon-vacancy_center_in_diamond}
The silicon-vacancy (SiV) center in diamond is a type of point defect that consists of a silicon atom substituting for a carbon atom in the diamond lattice, with an adjacent vacancy (a missing carbon atom) in the crystal structure. This defect has garnered significant interest due to its unique optical and electronic properties, making it suitable for various applications in quantum technology, optoelectronics, and sensing.
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