Tunnel magnetoresistance (source code)

= Tunnel magnetoresistance
{wiki=Tunnel_magnetoresistance}

Tunnel magnetoresistance (TMR) is a quantum mechanical phenomenon observed in magnetic tunnel junctions (MTJs). These junctions consist of two ferromagnetic layers separated by a thin insulating barrier, typically only a few nanometers thick. TMR arises from the spin-dependent tunneling of electrons through this barrier.