 Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others

ID: metalorganic-vapor-phase-epitaxial-growth-of-a-high-quality-gan-film-using-an-aln-buffer-layer-by-hiroshi-amano-and-others

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others by

Codex  0 Created 2026-10-18 Updated 2026-11-05

Applied Physics Letters 48, 353–355. Journal article.

doi.org/10.1063/1.96549

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