Naruhito Iwasa coauthored experiments on p-type semiconductor behavior in gallium nitride. Contrasting annealing in nitrogen and ammonia linked changes in electrical resistivity to hydrogen; the authors proposed neutral complexes of hydrogen and acceptor impurities as a mechanism reducing mobile electron holes.[ref]
Hole Compensation Mechanism of P-Type GaN Films by Shuji Nakamura and others. pp. 1258–1266, author list, abstract and experimental comparison of annealing atmospheres: hydrogen-related hole compensation; indexed primary PDF text.
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