 Solution

Choose process B, the citric-acid/peroxide wet etch. Its GaAs-to-AlGaAs etch selectivity is $200/1=200$, giving strong protection of the underlying barrier and a controllable removal rate for the thin cap.

For comparison, A has selectivity one and therefore no useful etch stop. It is also extremely fast: a nominal $20\mathrm{nm}$ GaAs layer would be removed in only $0.048\mathrm{s}$. C has selectivity $1000/20=50$, useful but inferior to B, and clears the same cap in about $1.2\mathrm{s}$. D has selectivity four, clears the cap in about $0.060\mathrm{s}$ and additionally risks plasma-induced surface damage or altered interface properties.

B clears the nominal cap in about $6\mathrm{s}$. Its slower underlying etch permits a more forgiving endpoint or modest overetch, although actual rates must be checked for the relevant composition and conditions. Wet-etch lateral undercut and contact-metal compatibility still matter; selectivity alone does not make every mask geometry acceptable.