 Solution

Use equal-width rectangular contact windows in a row with several different edge-to-edge spacings. For positive-resist lift-off, the future metal pads correspond to clear windows in an otherwise chrome-covered mask: exposure removes resist there, and the unexposed background retains resist beneath unwanted metal.

For ordinary ohmic transmission line contact measurement, a conducting strip or isolated mesa of width $W$ connects adjacent pads. Measure several spacings $d$ so thatThe intercept separates two contact contributions from the sheet-resistance slope. Large enough pad length relative to the transfer length is needed for the simplest contact-resistivity extraction.

Prepare separate arrays on the appropriate surfaces: annealed source/drain metal on the n+ cap, and gate metal on cap-removed AlGaAs. A Schottky gate is nonlinear, so its interface cannot be assigned an ohmic zero-bias contact resistivity merely by fitting the same straight line. Use bias-dependent current–voltage or differential-contact analysis, accounting for the two rectifying contacts.