 Solution

Joining p-type and n-type regions initially allows majority carriers to diffuse across and recombine. Exposed negative acceptor charge on the p side and positive donor charge on the n side form a depletion region. Its electric field points from n to p and balances diffusion at equilibrium. The Fermi level is then spatially constant, while the conduction and valence band edges bend across the built-in potential; this equilibrium barrier cannot supply continuous power to a load.

forward bias makes p positive relative to n, reducing the barrier from $q{V}_{bi}$ to $q(V_{bi}-V)$. electrons enter p material and holes enter n material, becoming minority carriers whose diffusion and recombination sustain the current. reverse bias enlarges the barrier and leaves a much smaller minority-carrier current until breakdown. The ideal diffusion model gives $I=I_0[e^{qV/k_{B}T}-1]$, the Shockley diode equation; depletion-region recombination, series resistance and breakdown limit this approximation. Minority-carrier injection on both sides is essential to the junction theory.^[ref]