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An atomic displacement parameter describes the spread of an atom's modeled position about its mean in a crystal structure. An isotropic atomic displacement parameter represents equal spread in all directions; an anisotropic atomic displacement parameter uses a directional matrix. These parameters can reflect thermal motion, unresolved static variation and limitations of the refinement model, rather than temperature alone.

For isotropic Cartesian displacement, let $U_{\mathrm{iso}}$ be the mean-square displacement of one component, in squared angstroms. The conventional alternative parameter isThe IUCr dictionary gives both conventions and prefers reporting $U$.^[ref]

For an original numerical example, $U_{\mathrm{iso}}=0.010{\mathring{\mathrm{A}}}^2$ givesThe second value is the root-mean-square spread along one Cartesian direction. Under isotropy the three-dimensional mean-square displacement is $3U_{\mathrm{iso}}$, so the corresponding radial root-mean-square spread is about $0.173\mathring{\mathrm{A}}$.

This spread is not the same as uncertainty in the refined mean coordinate. Nor does doubling $B$ by itself prove that an atom's temperature doubled. Crystallographic disorder, imperfect data and a different structural model can affect the fitted parameter. Interpretation requires the experimental and modeling context.

Crystallographic site occupancy is the fraction of a specified atom type present at a modeled site in a crystal structure. Occupancy1 represents full occupation by that type; a fractional value describes an average over the crystal. The IUCr core dictionary distinguishes this fraction from simply listing the site coordinates and constrains the summed occupancies of atom types sharing a physical site.^[ref]

A fractional occupancy does not mean that an individual atom has been divided. For an original population example, suppose a site is occupied by the specified atom in750 of1000 equivalent unit cells. Its average occupancy is $q=0.75$. More generally, let the crystallographic site multiplicity be $m=4$ equivalent positions per unit cell, each with occupancy0.75. The expected number of those atoms per unit cell iswhere $I_j$ is1 when position $j$ is occupied and0 otherwise. Linearity of expectation does not require the occupations to be independent. Correlations and local ordering can differ while the average count remains the same.

If two alternative atom types completely and mutually exclusively fill one site, occupancies0.40and0.60 sum to1. That describes a different model from occupancy0.40 of one type with the rest vacant. Structural alternatives of this kind are associated with crystallographic disorder; occupancy must be interpreted together with the model of what shares the site.

In an ideal structure factor calculation, the contribution of a site is multiplied by its occupancy. For fixed position and atomic displacement parameter, write $F_H=q{A}_H$, where $A_H$ is its full-occupancy complex contribution. A heavy-atom derivative then has $F_{PH}=F_P+q{A}_H$. With original values $F_P=3+4i$ and $A_H=2$, occupancy0.5 gives squared amplitude $|4+4i{|}^2=32$, whereas occupancy1 gives $|5+4i{|}^2=41$. The native value is25. Intensity changes are therefore not simply proportional to occupancy, because the added amplitude interferes with the parent amplitude.

The IUCr dictionary for multiple isomorphous replacement records occupancy separately for a heavy-atom site in each derivative.^[ref] A refined fraction concerns that structural site and scattering model; it is not by itself a general measurement of bulk chemical purity.