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Electron repulsion is the repulsive electrostatic interaction between electrons. In a metal complex it affects pairing costs and many-electron transition energies, so a measured absorption maximum is not always identical to a one-electron orbital splitting.

A Mott transition is a change between a conducting state and a Mott insulator, driven by the competition between electron motion and electron repulsion. A partially filled energy band need not conduct if repulsion makes moving an electron onto an already occupied site too costly.

The half-filled Hubbard model illustrates the mechanism: hopping lowers the kinetic energy, whereas on-site repulsion $U$ penalizes double occupation. Increasing $U$ relative to the energy-band width can suppress charge motion and open a gap for charge excitations. Changing pressure, composition or carrier concentration can alter that competition, although actual materials may also change their crystal structure or magnetic order. This interaction mechanism differs from a band insulator with filled bands and from disorder-driven Anderson localization.

The relevant spectrochemical series order is O-bound nitrito $<$ Ammonia $<$ N-bound nitro. A pi-donor ligand tends to raise the metal orbitals derived from $t_{2g}$, reducing the octahedral splitting; a pi-acceptor ligand stabilizes those orbitals, increasing the splitting. Since photon energy is $E=hc/\lambda$, the stronger-field complex absorbs at the shorter wavelength. ThusThe corresponding spectroscopic wavenumbers are approximately $21834$, $21097$ and $20576\mathrm{c}{\mathrm{m}}^{-1}$. These are the observed band energies, not three exact independent determinations of ${\Delta }_o$: low-spin $d^6$ transition energies also contain electron repulsion contributions, and replacing one ligand lowers the ideal octahedral symmetry. The relative assignment is nevertheless robust.