Gamma point 2026-10-20
The Gamma point is zero crystal wavevector, modulo reciprocal-lattice vectors. A direct band gap at this point allows a low-energy vertical optical transition with negligible photon momentum. Crystal symmetry constrains the degeneracies and symmetry labels of the band-edge states.
For a representative unstrained zinc blende structure III-V semiconductor such as gallium arsenide, take the valence-band maximum at the Gamma point as zero. The near-centre ordering is an s-like conduction band doublet above a p-like valence quartet. Spin-orbit interaction puts the p-like doublet below the quartet by . These are the zone-centre bands of a zinc-blende III-V semiconductor.
The quartet produces the heavy-hole and light-hole bands. Along a chosen symmetry direction, their components have and respectively; their different curvatures define different positive hole effective masses. They are degenerate at zero wavevector in the unstrained cubic crystal, but separate away from it. The doublet is the split-off valence band. To leading isotropic order,
Valence-band curvature is negative for electrons; the corresponding hole masses are positive. Real valence bands warp with direction, so these are illustrative effective-mass parabolas rather than an exact spherical band structure.
The k·p perturbation theory couples the s-like and p-like states through momentum matrix elements. It controls the conduction-band mass, nonparabolicity and mixing of hole characters. Strain or quantum confinement can split the heavy/light degeneracy even at zero in-plane wavevector. The lack of inversion symmetry in zinc blende also permits spin splitting away from the zone centre; time-reversal symmetry still protects the zone-centre doublets.
The s–p electric-dipole transitions near are optically important and produce structures at and with polarization-dependent weights. For direct band gap compounds the conduction minimum is also at , allowing near-edge absorption and emission without a momentum-supplying phonon. Not every III-V compound is direct-gap, and wurtzite materials have an additional crystal-field splitting; the cubic scheme should not be imposed on every III-V semiconductor. [ref]
Figure 1.
Zone-centre III-V bands
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A common unstrained cubic III-V band ordering consists of an s-like conduction doublet, a p-like quartet and a lower spin-orbit split-off doublet. In the cubic limit the quartet gives heavy-hole and light-hole bands that meet at the Gamma point; different curvatures and direction-dependent mixing distinguish them away from it. The split-off valence band is separated by . This common ordering is a model to check against the actual material, not a consequence of chemical stoichiometry alone.