Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low Energy Electron Beam Irradiation by Hiroshi Amano
= Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low Energy Electron Beam Irradiation by Hiroshi Amano
{c}
{tag=Work by Hiroshi Amano}
{title2=2014; lecture delivered 8 December 2014; printed editions may be 2015}
Authored Nobel lecture.
https://www.nobelprize.org/uploads/2018/06/amano-lecture.pdf
https://journals.aps.org/rmp/pdf/10.1103/RevModPhys.87.1133