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Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low Energy Electron Beam Irradiation by Hiroshi Amano
(2014; lecture delivered 8 December 2014; printed editions may be 2015)
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2026-10-18
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Work by Hiroshi Amano
Authored Nobel lecture.
www.nobelprize.org/uploads/2018/06/amano-lecture.pdf
journals.aps.org/rmp/pdf/10.1103/RevModPhys.87.1133
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