= Herbert Kroemer
{c}
{tag=Physicist}
{title2=1928–2024}
{wiki}
= H. Kroemer
{c}
{synonym}
<Herbert Kroemer> developed semiconductor-device designs that use changes of material composition to control carrier motion. A <heterojunction> introduces band offsets, while a graded band edge can create a quasielectric force on carriers. The resulting design language goes beyond treating every device region as the same material under a different voltage. In <double heterostructures>, carrier confinement and optical guiding can concentrate recombination in a useful active region, enabling improved <semiconductor> <light> sources.<Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks by Herbert Kroemer>[Reviews of Modern Physics 73, 783 (2001), band offsets, graded composition and heterostructure devices]{ref}
A <physicist> who studied <semiconductor devices> at Santa Barbara.<Professional profile of Herbert Kroemer>[Independent professional identity]{ref}
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{title=Portrait of <Herbert Kroemer>}
{description=Javier Chagoya, Naval Postgraduate School, 24 October 2008; existing Commons crop by TDKR Chicago 101. Public domain in the United States (US federal government work). https://creativecommons.org/publicdomain/mark/1.0/[Source usage terms], via Wikimedia Commons.}
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