Herbert Kroemer developed semiconductor-device designs that use changes of material composition to control carrier motion. A heterojunction introduces band offsets, while a graded band edge can create a quasielectric force on carriers. The resulting design language goes beyond treating every device region as the same material under a different voltage. In double heterostructures, carrier confinement and optical guiding can concentrate recombination in a useful active region, enabling improved semiconductor light sources.[ref]
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks by Herbert Kroemer. Reviews of Modern Physics 73, 783 (2001), band offsets, graded composition and heterostructure devices
A physicist who studied semiconductor devices at Santa Barbara.[ref]
Professional profile of Herbert Kroemer. Independent professional identity
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Portrait of Herbert Kroemer
. Javier Chagoya, Naval Postgraduate School, 24 October 2008; existing Commons crop by TDKR Chicago 101. Public domain in the United States (US federal government work). Source usage terms, via Wikimedia Commons. Source. Articles by others on the same topic
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Herbert Kroemer is a German-American physicist and electrical engineer known for his significant contributions to the fields of semiconductor physics and optoelectronics. He was born on July 25, 1928, in Weimar, Germany. Kroemer is particularly recognized for his work in the development of heterojunctions, which are crucial in the fabrication of various electronic and optoelectronic devices, including lasers, light-emitting diodes (LEDs), and high-speed transistors.