= Self-assembled InAs quantum-dot single-photon source
A <quantum dot> of InAs embedded in <gallium arsenide> confines injected <Electrons> and <electron holes>. Strain-driven island formation supplies dots with lateral dimensions of order tens of nanometres and heights of a few nanometres. In an electrically driven implementation, a dot lies in a junction's intrinsic region. Selecting one dot spatially and one radiative line spectrally turns discrete <exciton> recombination into a <single-photon source>. Pulsed injection must avoid re-excitation during the same collection window.
The pioneering electrically driven device used an areal dot density around $5\times10^8\,\mathrm{cm^{-2}}$, a GaAs p-i-n structure and an aperture selecting individual-dot light.https://doi.org/10.1126/science.1066790[Device description and figure 1, printed p.103]{ref}
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