A quantum dot of InAs embedded in gallium arsenide confines injected Electrons and electron holes. Strain-driven island formation supplies dots with lateral dimensions of order tens of nanometres and heights of a few nanometres. In an electrically driven implementation, a dot lies in a junction's intrinsic region. Selecting one dot spatially and one radiative line spectrally turns discrete exciton recombination into a single-photon source. Pulsed injection must avoid re-excitation during the same collection window.
The pioneering electrically driven device used an areal dot density around , a GaAs p-i-n structure and an aperture selecting individual-dot light.[ref]

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