= Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others
{c}
{tag=Work by Chang-Ho Chen}
{tag=Work by Ulrich Gösele}
{tag=Work by Teh Yu Tan}
{title2=1999}
Journal of Applied Physics 86, 5376-5384. The equilibrium model distinguishes neutral and ionized silicon donors on gallium sites from neutral and ionized silicon acceptors on arsenic sites.
https://doi.org/10.1063/1.371534
https://scholars.duke.edu/publication/683296
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