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{c}
{tag=Work by Chang-Ho Chen}
{tag=Work by Ulrich Gösele}
{tag=Work by Teh Yu Tan}
{title2=1999}

Journal of Applied Physics 86, 5376-5384. The equilibrium model distinguishes neutral and ionized silicon donors on gallium sites from neutral and ionized silicon acceptors on arsenic sites.

https://doi.org/10.1063/1.371534

https://scholars.duke.edu/publication/683296


Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others

Amphoteric dopant

Past exam of the quantum condensed matter course of the University of Cambridge / 2004 / Section C / C14 / Solution

Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others (1999)

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Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others (1999)

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