Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low Energy Electron Beam Irradiation by Hiroshi Amano 2026-10-18
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Authored Nobel lecture.
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others 2026-10-18
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Applied Physics Letters 48, 353–355. Journal article.
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