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Work by Ulrich Gösele
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Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs by Chang-Ho Chen and others
2026-10-20
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Journal of
Applied Physics
86, 5376-5384. The equilibrium
model
distinguishes neutral and ionized
silicon
donors on
gallium
sites from neutral and ionized
silicon
acceptors on arsenic sites.
doi.org/10.1063/1.371534
scholars.duke.edu/publication/683296
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