Y. Toyoda coauthored a method for growing gallium nitride on sapphire by metalorganic vapour-phase epitaxy, introducing an aluminium nitride layer before the main film. The films had flat, crack-free surfaces, with X-ray diffraction and photoluminescence used to assess their quality.[ref]
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer by Hiroshi Amano and others. Applied Physics Letters 48 (1986), pp. 353–355: author list and abstract, atmospheric-pressure growth with AlN layers and optical/diffraction characterization; primary article copy.
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