= Yufeng Hao
{c}
\b[Yufeng Hao] was first-listed author of the 2013 study connecting surface oxygen on <copper> with growth of large single-crystal <graphene> domains. The team identified changes in nucleation density and growth behavior.<The role of surface oxygen in the growth of large single-crystal graphene on copper by Yufeng Hao and others>[ordered byline and Abstract]{ref}
This separates making nuclei from expanding existing domains. A treatment can change how many growth centers form as well as how quickly their boundaries advance. Faster growth alone does not guarantee a single crystal if many independently oriented domains are already present.
For an original planar-spacing estimate, suppose nuclei have number density $N$ per unit area and each ultimately occupies an area of order $1/N$. A characteristic spacing is then
$$
\ell\sim N^{-1/2}.
$$
At $N=10^8\,\mathrm{m^{-2}}$, $\ell\sim100\,\mu\mathrm m$. At $N=10^4\,\mathrm{m^{-2}}$, $\ell\sim1\,\mathrm{cm}$. Reducing density by a factor of $10^4$ enlarges this characteristic length by a factor of 100, not $10^4$.
The estimate assumes a simple two-dimensional allocation of area; it does not describe nucleation timing, anisotropic growth or coalescence in detail. Those omissions matter in a real <chemical vapor deposition> experiment. The numerical densities are illustrative, not measurements quoted from Hao's paper. Material-growth control and spectroscopic characterization supply complementary evidence about the resulting graphene.
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