 Epitaxial graphene growth on silicon carbide

Epitaxial graphene growth on silicon carbide (SiC) is a process used to create high-quality graphene layers on the surface of silicon carbide substrates. Graphene is a single layer of carbon atoms arranged in a two-dimensional honeycomb lattice and possesses exceptional electrical, mechanical, and thermal properties. The ability to produce graphene on a suitable substrate is crucial for its application in various fields, including electronics, optics, and materials science. ### Process 1.