 Reverse short-channel effect

The Reverse Short-Channel Effect (RSCE) is a phenomenon observed in semiconductor devices, particularly in field-effect transistors (FETs), as they are scaled down to smaller dimensions. The RSCE is essentially the opposite of the Short-Channel Effect (SCE). In short-channel devices, as the channel length decreases, several effects can negatively impact device performance, such as increased leakage currents, reduced control of the gate over the channel, and threshold voltage roll-off.