 Silicon carbide color centers

Silicon carbide (SiC) color centers are defects or impurities within the silicon carbide crystal lattice that can interact with light, leading to the absorption and emission of photons at specific wavelengths. These defects can be created intentionally during the synthesis or processing of silicon carbide materials or can occur naturally. Color centers in general refer to localized electronic states in a material that arise due to the presence of defects.