 Solution

In a weakly doped n-type semiconductor, the mobile electrons occupy states near the bottom of the conduction band. Their local band curvature is positive, so their band effective mass is positive and approximately constant sufficiently near that minimum. For the usual $\beta <0$ convention, expand about $k=0$:Stronger overlap gives larger $|\beta |$, greater curvature and a smaller mass within this model. Positive $\beta$ simply places the minimum at the zone boundary and again gives a positive edge mass. A negative electron mass near a band maximum instead motivates the positive-mass electron hole description; it is not the usual conduction-edge situation for an n-type semiconductor. No numerical comparison with $m_e$ follows without values of $a$ and $\beta$.