 Solution

The ambient-temperature Fermi level is raised into the upper part of the gap, toward the conduction-band edge, relative to intrinsic silicon. The sample is an n-type semiconductor: ionized donors supply many more conduction electrons than the intrinsic population.

For a nondegenerate, substantially ionized sample with negligible acceptors, $n\simeq N_D$. With effective density of states $N_c$, the conduction-band relation givesBecause a few ppm normally gives $N_D\ll N_c$ at ambient temperature, the chemical potential remains below the conduction-band edge rather than entering it as in a strongly degenerate semiconductor. Its precise position requires the dopant density, density of states and degree of ionization; the broad qualitative shift is fixed by donor doping.

It is not necessary for $\mu$ to lie between the donor level and the conduction edge. In a substantially ionized nondegenerate sample, the chemical potential can lie below the shallow donor level, as in the illustrative diagram. Donor ionization is determined by the level's occupation relative to $\mu$; a finite-temperature Fermi level is not the highest filled one-electron level of every individual configuration.